The Identification and Analysis of Latent Esd Damage on Cmos Input Gates
نویسنده
چکیده
Latent electrostatic discharge (LESD) damage sites are normally identified and analyzed after the damaged oxide has been transformed from a low to a high level leakage. Failure analysis typically focuses only on the primary rupture site, neglecting the remaining LESD damage sites. The purpose of this work is to present a new method of analysis which allows compromised oxides to be rapidly identified and then show the existence of multiple LESD damage sites. Images from the Scanning Electron Microscope and the Atomic Force Microscope associated with the LESD damage sites are compared.
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